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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV70 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 600V (Min) *High Power Dissipation *Fast Switching Speed APPLICATIONS *Designed for motor controls, switching mode power supplies applications. Absolute maximum ratings(Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 1300 600 6 10 15 3 6 140 150 -65~150 UNIT V V V A A A A W IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.89 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICES hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 100mA; LC= 125mH IE= 1mA; IC= 0 IC= 9A; IB= 3A B BUV70 MIN 600 6 MAX UNIT V V 1.8 2.0 1.0 2.0 5 7 5 9 V V mA IC= 9A; IB= 3A B VCE= 1300V; VBE= 0 VCE= 1200V; VBE= 0; TC=125 IC= 3.2A; VCE= 2V IC= 1.5A; VCE= 5V IC= 6A; VCE= 2V IC= 0.5A; VCE= 10V, f= 1MHz MHz Switching times Resistive Load ton ts tf Turn-on Time Storage Time Fall Time IC= 5A; IB1= -IB2= 1A; VCC= 250V; tp= 20s 0.5 4.0 0.6 s s s isc Websitewww.iscsemi.cn |
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